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ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt,Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFK90N20Q IXFK90N20QS VDSS ID25 RDS(on) = 200 V = 90 A = 22 mW trr 200 ns Maximum Ratings 200 200 20 30 90 360 100 50 5 500 -55 ... +150 150 -55 ... +150 300 0.9/6 10 V V V V A A A mJ V/ns W C C C C Nm/lb.in. g TO-264 AA (IXFK-S) (TAB) G S TO-264 AA (IXFK) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C 200 1 0.022 V V nA A mA l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V l l l IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier Fast switching Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space savings High power density S version suitable for surface mounting (c) 1997 IXYS All rights reserved 97536 (10/97) IXFK90N20Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 11000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 100 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External), 30 55 12 190 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 TO-264 AA; SMD-264 TO-264 AA 0.15 60 60 0.26 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXFK90N20QS TO-264 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 400 1.3 120 0.7 10 200 A A V ns C A Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V TO-264 SMD Outline Dim. A A1 b b1 b2 C D E e L L1 L2 L3 P 1 Gate 2, 4 Drain (collector) 3 Source (emitter) Q Q1 Millimeter Min. Max. 4.70 2.59 0.94 2.21 2.79 0.43 25.58 5.31 3.00 1.40 2.59 3.20 0.74 26.59 Inches Min. Max. .185 .102 .037 .087 .110 .017 1.007 .209 .118 .055 .102 .126 .029 1.047 19.30 20.29 5.46 BSC 4.90 2.24 1.90 0.00 3.10 6.10 8.38 3.94 2.16 6.17 5.10 2.44 2.10 0.10 3.51 6.50 8.79 4.75 2.36 6.43 .760 .799 .215 BSC .193 .088 .075 .000 .122 .240 .330 .155 .085 .243 .201 .096 .083 .004 .138 .256 .346 .187 .093 .253 R R1 Note: S 1. This drawing meets of dimensions$ requirement of JEDEC outlines TO-264AA except L, L1, L2, L3. 2. All metal surface are solder plated except trimmed area. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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